J. Semicond. > 2008, Volume 29 > Issue 10 > 2003-2008

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Growth of InAs/GaAs Quantum Dots and Quantum Rings by Droplet Epitaxy Based on Patterned Substrate

Zhao Jian, Chen Yonghai, Wang Zhanguo and Xu Bo

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Abstract: Droplet epitaxy is a new MBE growth method for semiconductor materials,but there has been no effective research concerning the influence of patterned substrate on droplet epitaxy until now.The authors report different quantum dots and quantum rings grown on different types of μm-scale patterned substrates and analyze the influence of patterned substrate on droplet epitaxy,the formation mechanism of the quantum rings,and their distribution behavior.

Key words: droplet epitaxypatterned substratequantum dotquantum ringdistribution behavior

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    Received: 18 August 2015 Revised: 22 April 2008 Online: Published: 01 October 2008

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      Zhao Jian, Chen Yonghai, Wang Zhanguo, Xu Bo. Growth of InAs/GaAs Quantum Dots and Quantum Rings by Droplet Epitaxy Based on Patterned Substrate[J]. Journal of Semiconductors, 2008, In Press. Zhao J, Chen Y H, Wang Z G, Xu B. Growth of InAs/GaAs Quantum Dots and Quantum Rings by Droplet Epitaxy Based on Patterned Substrate[J]. J. Semicond., 2008, 29(10): 2003.Export: BibTex EndNote
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      Zhao Jian, Chen Yonghai, Wang Zhanguo, Xu Bo. Growth of InAs/GaAs Quantum Dots and Quantum Rings by Droplet Epitaxy Based on Patterned Substrate[J]. Journal of Semiconductors, 2008, In Press.

      Zhao J, Chen Y H, Wang Z G, Xu B. Growth of InAs/GaAs Quantum Dots and Quantum Rings by Droplet Epitaxy Based on Patterned Substrate[J]. J. Semicond., 2008, 29(10): 2003.
      Export: BibTex EndNote

      Growth of InAs/GaAs Quantum Dots and Quantum Rings by Droplet Epitaxy Based on Patterned Substrate

      • Received Date: 2015-08-18
      • Accepted Date: 2008-04-02
      • Revised Date: 2008-04-22
      • Published Date: 2008-11-11

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