Chin. J. Semicond. > 2005, Volume 26 > Issue 12 > 2290-2293

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A New Process for Improving Performance of VCSELs

Hao Yongqin, Zhong Jingchang, Xie Haorui, Jiang Xiaoguang, Zhao Yingjie and Wang Lijun

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Abstract: A new process method is proposed to improve the light output power of GaAs vertical cavity surface-emitting lasers (VCSELs).The VCSELs with open-annulus-distributed holes have a light output power 1.34 times higher than those with ring trenches.The 14μm-aperture devices have a light output power higher than 10mW and have a maximum of 12.48mW at 29.6mA.In addition,open-annulus-distributed holes offer bridges for current injection, so the connecting Ti-Au metal between the ohmic contact and bonding pad does not have to cross the ring trench,and it therefore would not cause the connecting metal to be broken.These VCSELs also show high-temperature operation capabilities,and they have a maximum output power of 8mW even at an operation temperature of up to 60℃.

Key words: epitaxial growthlaser diodequantum-well lasersemiconductor laservertical-cavity surface-emitting laser

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2005

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      Hao Yongqin, Zhong Jingchang, Xie Haorui, Jiang Xiaoguang, Zhao Yingjie, Wang Lijun. A New Process for Improving Performance of VCSELs[J]. Journal of Semiconductors, 2005, In Press. Hao Y Q, Zhong J C, Xie H R, Jiang X G, Zhao Y J, Wang L J. A New Process for Improving Performance of VCSELs[J]. Chin. J. Semicond., 2005, 26(12): 2290.Export: BibTex EndNote
      Citation:
      Hao Yongqin, Zhong Jingchang, Xie Haorui, Jiang Xiaoguang, Zhao Yingjie, Wang Lijun. A New Process for Improving Performance of VCSELs[J]. Journal of Semiconductors, 2005, In Press.

      Hao Y Q, Zhong J C, Xie H R, Jiang X G, Zhao Y J, Wang L J. A New Process for Improving Performance of VCSELs[J]. Chin. J. Semicond., 2005, 26(12): 2290.
      Export: BibTex EndNote

      A New Process for Improving Performance of VCSELs

      • Received Date: 2015-08-19

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