| Citation: |
Su Shubing, Liu Xunchun, Liu Xinyu, Yu Jinyong, Wang Runmei, Xu Anhuai, Qi Ming. Performance of a Self-Aligned InP/GaInAs SHBT with a Novel T-Shaped Emitter[J]. Journal of Semiconductors, 2006, In Press.
Su S B, Liu X C, Liu X Y, Yu J Y, Wang R M, Xu A H, Qi M. Performance of a Self-Aligned InP/GaInAs SHBT with a Novel T-Shaped Emitter[J]. Chin. J. Semicond., 2006, 27(3): 434.
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Performance of a Self-Aligned InP/GaInAs SHBT with a Novel T-Shaped Emitter
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Abstract
self-aligned InP/GaInAs single heterojunction bipolar transistor(HBT) is investigated using a novel T-shaped emitter.A U-shaped emitter layout,selective wet etching,laterally etched undercut,and an air-bridge are applied in this process.The device,which has a 2μm×12μm U-shaped emitter area,demonstrates a common-emitter DC current gain of 170,an offset voltage of 0.2V,a knee voltage of 0.5V,and an open-base breakdown voltage of over 2V.The HBT exhibits good microwave performance with a current gain cutoff frequency of 85GHz and a maximum oscillation frequency of 72GHz.These results indicate that these InP/InGaAs SHBTs are suitable for low-voltage,low-power,and high-frequency applications. -
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