Chin. J. Semicond. > 1999, Volume 20 > Issue 9 > 759-762

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用改进的气相物理输运法制备高品位CdTe单晶

杨柏梁 , 石川幸雄 and 一色实

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    Received: 20 August 2015 Revised: Online: Published: 01 September 1999

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      • Received Date: 2015-08-20

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