Chin. J. Semicond. > 2001, Volume 22 > Issue 5 > 656-659
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栅氧化方式对N沟输入CMOS运算放大器电离辐射效应的影响

陆妩 , 郭旗 , 任迪远 , 余学锋 , 张国强 , 严荣良 , 王明刚 , 胡浴红 and 赵文魁

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Key words: N沟输入CMOS运算放大器, 跨导, 界面态, 电离辐照

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    Received: 20 August 2015 Revised: Online: Published: 01 May 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(5): 656-659
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      • Received Date: 2015-08-20

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