Chin. J. Semicond. > 2006, Volume 27 > Issue 4 > 573-582

Status and Trends in Advanced SOI Devices and Materials

Balestra Francis

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Abstract: A review of recently explored effects in advanced SOI devices and materials is given.The effects of key device parameters on the electrical and thermal floating body effects are shown for various device architectures.Recent advances in the understanding of the sensitivity of electron and hole transport to the tensile or compressive uniaxial and biaxial strains in thin film SOI are presented.The performance and physical mechanisms are also addressed in multi-gate Si,SiGe and Ge MOSFETs.New hot carrier phenomena are discussed.The effects of gate misalignment or underlap,as well as the use of the back gate for charge storage in double-gate nanodevices and of capacitorless DRAM are also outlined.

Key words: SOI MOSFETsstrain effectsmulti-gate devicesnew memories

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2006

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      Balestra Francis. Status and Trends in Advanced SOI Devices and Materials[J]. Journal of Semiconductors, 2006, In Press. Balestra F. Status and Trends in Advanced SOI Devices and Materials[J]. Chin. J. Semicond., 2006, 27(4): 573.Export: BibTex EndNote
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      Balestra Francis. Status and Trends in Advanced SOI Devices and Materials[J]. Journal of Semiconductors, 2006, In Press.

      Balestra F. Status and Trends in Advanced SOI Devices and Materials[J]. Chin. J. Semicond., 2006, 27(4): 573.
      Export: BibTex EndNote

      Status and Trends in Advanced SOI Devices and Materials

      • Received Date: 2015-08-20

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