| Citation: |
Wang Liangxing, Tu Jielei, Zhang Zhongwei, Chi Weiying, Peng Dongsheng, Chen Chaoqi, Chen Mingbo. High Efficiency Ge Bottom Cell for GaInP2/GaAs/Ge Three-Junction Tandem Solar Cell[J]. Journal of Semiconductors, 2005, In Press.
Wang L X, Tu J L, Zhang Z W, Chi W Y, Peng D S, Chen C Q, Chen M B. High Efficiency Ge Bottom Cell for GaInP2/GaAs/Ge Three-Junction Tandem Solar Cell[J]. Chin. J. Semicond., 2005, 26(13): 196.
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High Efficiency Ge Bottom Cell for GaInP2/GaAs/Ge Three-Junction Tandem Solar Cell
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Abstract
Analyze the impacts of structure and device process of Ge solar cell on open-voltage,light current density, and fill factor.By controlling the surface-recombination velocity,reduction of emitter thickness, and improvement of device process,demonstrate Ge solar cell with open-voltage of 2875mV,short-circuit current density of 73.13mA/cm2,and efficiency of 7.35% -
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