| Citation: |
Meng Zhiguo, Wong Man, Wu Chunya, Li Juan, Kwok H S, Xiong Shaozhen, Zhang Fang. Laser Post-Treated Metal-Induced Unilaterally CrystallizedPolycrystalline Silicon Thin Film Transistors[J]. Journal of Semiconductors, 2006, In Press.
Meng Z G, Wo N M, Wu C Y, Li J, Kwok H S, Xiong S Z, Zhang F. Laser Post-Treated Metal-Induced Unilaterally CrystallizedPolycrystalline Silicon Thin Film Transistors[J]. Chin. J. Semicond., 2006, 27(10): 1794.
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Laser Post-Treated Metal-Induced Unilaterally CrystallizedPolycrystalline Silicon Thin Film Transistors
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Abstract
Post-treated metal-induced unilaterally crystallized(MIUC) poly-Si technology using a triple frequency YAG solid-state laser is discussed in detail.It is found that MIUC TFT has good performance and uniformity.By using the triple frequency YAG laser post-treatment,the performance of the MIUC TFT can be further enhanced.The field-mobility of the MIUC TFT increases almost by a factor of two. In addition,the improvement of the performance and the uniformity of the post-treated TFTs are correlated to the modified laser condition and vary regularly,which implies that the laser post-treatment is controllable.This provides a foundation for industrialization. -
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