| Citation: |
Song Ruiliang, Mao Luhong, Guo Weilian, Yu Changliang. Simulation and Experimental Research on a Schottky Gate Resonant Tunneling Transistor[J]. Journal of Semiconductors, 2008, In Press.
Song R L, Mao L H, Guo W L, Yu C L. Simulation and Experimental Research on a Schottky Gate Resonant Tunneling Transistor[J]. J. Semicond., 2008, 29(6): 1062.
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Simulation and Experimental Research on a Schottky Gate Resonant Tunneling Transistor
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Abstract
A Schottky gate resonant tunneling transistor (SGRTT) is fabricated.Relying on simulation by ATLAS software,we find that the gate voltages can be used to control the current of SGRTT when the emitter terminal is grounded and a positive bias voltage is applied to the collector terminal.When the collector terminal is grounded,the gate voltages can control the peak voltage.As revealed by measurement results,the reason is that the gate voltages and the electric field distribution on emitter and collector terminal change the distribution of the depletion region. -
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