| Citation: |
Li Qi, Zhang Bo, Li Zhaoji. A Breakdown Model of Thin Drift Region LDMOS with a Step Doping Profile[J]. Journal of Semiconductors, 2005, In Press.
Li Q, Zhang B, Li Z J. A Breakdown Model of Thin Drift Region LDMOS with a Step Doping Profile[J]. Chin. J. Semicond., 2005, 26(11): 2159.
Export: BibTex EndNote
|
A Breakdown Model of Thin Drift Region LDMOS with a Step Doping Profile
-
Abstract
An analytical breakdown model for thin drift region RESURF LDMOS with a step doping profile is presented.Based on 2D Poisson equation,the derived model gives the solutions of the surface field distributions and the breakdown voltage.The influence of all design parameters on breakdown voltage is calculated.All analytical results are well verified by the numerical analysis obtained by the semiconductor device simulator MEDICI.The breakdown voltage of the step profile structure increases by a factor of 1.2 compared with the conventional RESURF device.-
Keywords:
- thin drift region,
- step doping profile,
- breakdown voltage,
- model
-
References
-
Proportional views
DownLoad: