Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 249-252
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Growth and Characterization of m Plane GaN Material by MOCVD

Xie Zili, Zhang Rong, Han Ping, Liu Chengxiang, Xiu XiangQian, Liu Bin, Li Liang, Zhao Hong, Zhu Shunming, Jiang Ruolian, Zhou Shengmin, Shi Yi and Zheng Youdou

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Abstract: The c plane GaN and related materials have the built-in electric fields along C direction，this built-in electric fields limit the rise to the quantum efficiency. The quantum efficiency of the device fabricated by m plane GaN and related materi- als may get high due to non·polarization and no the built in electric fields. The m-plane GaN single crystal has been grown by metal.organic chemical vapor deposition(MOCVD).The effects of the growth conditions have been studied.

Key words: MOCVD, m-plane, non·polarization,  GaN

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(S1): 249-252
      Xie Zili, Zhang Rong, Han Ping, Liu Chengxiang, Xiu XiangQian, Liu Bin, Li Liang, Zhao Hong, Zhu Shunming, Jiang Ruolian, Zhou Shengmin, Shi Yi, Zheng Youdou. Growth and Characterization of m Plane GaN Material by MOCVD[J]. Journal of Semiconductors, 2007, In Press. Xie Z L, Zhang R, Han P, Liu C X, Xiu X Q, Liu B, Li L, Zhao H, Zhu S M, Jiang R L, Zhou S M, Shi Y, Zheng Y D. Growth and Characterization of m Plane GaN Material by MOCVD[J]. Chin. J. Semicond., 2007, 28(S1): 249.Export: BibTex EndNote
      Citation:
      Xie Zili, Zhang Rong, Han Ping, Liu Chengxiang, Xiu XiangQian, Liu Bin, Li Liang, Zhao Hong, Zhu Shunming, Jiang Ruolian, Zhou Shengmin, Shi Yi, Zheng Youdou. Growth and Characterization of m Plane GaN Material by MOCVD[J]. Journal of Semiconductors, 2007, In Press.

      Xie Z L, Zhang R, Han P, Liu C X, Xiu X Q, Liu B, Li L, Zhao H, Zhu S M, Jiang R L, Zhou S M, Shi Y, Zheng Y D. Growth and Characterization of m Plane GaN Material by MOCVD[J]. Chin. J. Semicond., 2007, 28(S1): 249.
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      Growth and Characterization of m Plane GaN Material by MOCVD

      • Key Laboratory of Photonic and Electronic Materials Science and Technology of Jiangsu，Department of Physics，Nanjing University，Nanjing 210093，China,Key Laboratory of Photonic and Electronic Materials Science and Technology of Jiangsu，Department of Physics，Nanjing University，Nanjing 210093，China,Key Laboratory of Photonic and Electronic Materials Science and Technology of Jiangsu，Department of Physics，Nanjing University，Nanjing 210093，China,Key Laboratory of Photonic and Electronic Materials Science and Technology of Jiangsu，Department of Physics，Nanjing University，Nanjing 210093，China,Key Laboratory of Photonic and Electronic Materials Science and Technology of Jiangsu，Department of Physics，Nanjing University，Nanjing 210093，China,Key Laboratory of Photonic and Electronic Materials Science and Technology of Jiangsu，Department of Physics，Nanjing University，Nanjing 210093，China,Key Laboratory of Photonic and Electronic Materials Science and Technology of Jiangsu，Department of Physics，Nanjing University，Nanjing 210093，China,Key Laboratory of Photonic and Electronic Materials Science and Technology of Jiangsu，Department of Physics，Nanjing University，Nanjing 210093，China,Key Laboratory of Photonic and Electronic Materials Science and Technology of Jiangsu，Department of Physics，Nanjing University，Nanjing 210093，China,Key Laboratory of Photonic and Electronic Materials Science and Technology of Jiangsu，Department of Physics，Nanjing University，Nanjing 210093，China,Shanghai Institute of Optics and Fine Mechanics，Chinese Academy of Sciences，Shanghai 201800，China,Key Laboratory of Photonic and Electronic Materials Science and Technology of Jiangsu，Department of Physics，Nanjing University，Nanjing 210093，China and Key Laboratory of Photonic and Electronic Materials Science and Technology of Jiangsu，Department of Physics，Nanjing University，Nanjing 210093，China

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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