Fabrication of a New-Layout InGaP/GaAs HBT

Yang Wei; Liu Xunchun; Zhu Min; Wang Runmei

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Article Navigation > Journal of Semiconductors > 2006 > 27(9): 1604-1607

Yang Wei, Liu Xunchun, Zhu Min, Wang Runmei. Fabrication of a New-Layout InGaP/GaAs HBT[J]. Journal of Semiconductors, 2006, In Press. Yang W, Liu X C, Zhu M, Wang R M. Fabrication of a New-Layout InGaP/GaAs HBT[J]. Chin. J. Semicond., 2006, 27(9): 1604.Export: BibTex EndNote

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Yang Wei, Liu Xunchun, Zhu Min, Wang Runmei. Fabrication of a New-Layout InGaP/GaAs HBT[J]. Journal of Semiconductors, 2006, In Press.

Yang W, Liu X C, Zhu M, Wang R M. Fabrication of a New-Layout InGaP/GaAs HBT[J]. Chin. J. Semicond., 2006, 27(9): 1604.

Export: BibTex EndNote

Citation:

Yang Wei, Liu Xunchun, Zhu Min, Wang Runmei. Fabrication of a New-Layout InGaP/GaAs HBT[J]. Journal of Semiconductors, 2006, In Press.

Yang W, Liu X C, Zhu M, Wang R M. Fabrication of a New-Layout InGaP/GaAs HBT[J]. Chin. J. Semicond., 2006, 27(9): 1604.

Export: BibTex EndNote

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Fabrication of a New-Layout InGaP/GaAs HBT

Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received Date: 2015-08-18
Accepted Date: 2006-02-17
Revised Date: 2006-06-05
Published Date: 2006-10-12

Abstract

Abstract

The HBT is one of the most important devices in microwave and millimeter wave fields due to its outstanding performance and high reliability.A novel-layout HBT that employs a three-finger emitter is demonstrated.Compared to an HBT with a two-finger emitter,this device has good process tolerance,high yield,and good uniformity.Furthermore,it has superior DC and high-frequency characteristics.
- HBT,
- three-finger emitter,
- self-aligned

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