Chin. J. Semicond. > 1998, Volume 19 > Issue 6 > 417-422
|

CONTENTS

In_xGa_(1-x)As/InP应变量子阱中激子跃迁能量随In组分的变化

王晓亮 , 孙殿照 , 孔梅影 , 侯洵 and 曾一平

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    Article Metrics

    Article views: 2335 Times PDF downloads: 1264 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: Online: Published: 01 June 1998

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1998  >  19(6): 417-422
      Export: BibTex EndNote
      Citation:


      Export: BibTex EndNote
      shu

      • Received Date: 2015-08-18

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return