Abstract: The electrical properties and the conductive mechanism of HfOxNy gate dielectric films deposited by dc sputtering were studied.The results indicate that higher temperature annealing in nitride ambient is helpful to improve the electrical properties of HfOxNy gate dielectric films.And at the low electric field the I-V characteristics obeys the Ohm’s law,while at the moderate field,the conductive mechanism is according to the space charge limited current(SCLC) theory.The leakage current density is not high that indicate that HfOxNy is a promising material instead of SiO2.

Key words: HfOxNy, sputtering, space charge limited current(SCLC), ion hopping conduction