Chin. J. Semicond. > 2004, Volume 25 > Issue 5 > 516-519

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一个超薄氧化物nMOSFET器件的直接隧穿电流经验公式(英文)

张贺秋 , 许铭真 and 谭长华

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Key words: 直接隧穿电流, nMOSFET, 超薄

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2004

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      • Received Date: 2015-08-19

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