Study and Fabrication of a Au/n-ZnO/p-Si Structure UV-Enhanced Phototransistor

Guo Junfu; Xie Jiachun; Duan Li; He Guanghong; Lin Bixia; Fu Zhuxi

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Guo Junfu, Xie Jiachun, Duan Li, He Guanghong, Lin Bixia, Fu Zhuxi. Study and Fabrication of a Au/n-ZnO/p-Si Structure UV-Enhanced Phototransistor[J]. Journal of Semiconductors, 2006, In Press. Guo J F, Xie J C, Duan L, He G H, Lin B X, Fu Z X. Study and Fabrication of a Au/n-ZnO/p-Si Structure UV-Enhanced Phototransistor[J]. Chin. J. Semicond., 2006, 27(1): 5.Export: BibTex EndNote

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Guo Junfu, Xie Jiachun, Duan Li, He Guanghong, Lin Bixia, Fu Zhuxi. Study and Fabrication of a Au/n-ZnO/p-Si Structure UV-Enhanced Phototransistor[J]. Journal of Semiconductors, 2006, In Press.

Guo J F, Xie J C, Duan L, He G H, Lin B X, Fu Z X. Study and Fabrication of a Au/n-ZnO/p-Si Structure UV-Enhanced Phototransistor[J]. Chin. J. Semicond., 2006, 27(1): 5.

Export: BibTex EndNote

Citation:

Guo Junfu, Xie Jiachun, Duan Li, He Guanghong, Lin Bixia, Fu Zhuxi. Study and Fabrication of a Au/n-ZnO/p-Si Structure UV-Enhanced Phototransistor[J]. Journal of Semiconductors, 2006, In Press.

Guo J F, Xie J C, Duan L, He G H, Lin B X, Fu Z X. Study and Fabrication of a Au/n-ZnO/p-Si Structure UV-Enhanced Phototransistor[J]. Chin. J. Semicond., 2006, 27(1): 5.

Export: BibTex EndNote

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Study and Fabrication of a Au/n-ZnO/p-Si Structure UV-Enhanced Phototransistor

Department of Physics,University of Science and Technology of China,Hefei 230026,China
Department of Physics,University of Science and Technology of China,Hefei 230026,China
Department of Physics,University of Science and Technology of China,Hefei 230026,China
Department of Physics,University of Science and Technology of China,Hefei 230026,China
Department of Physics,University of Science and Technology of China,Hefei 230026,China
Department of Physics,University of Science and Technology of China,Hefei 230026,China

Received Date: 2015-08-20

Abstract

Abstract

The fabrication and characterization of a Schottky-emitter heterojunction-collector UV-enhanced bipolar phototransistor (SHBT) are presented.The luminescence peak of the ZnO film is observed at 371nm in the PL spectrum.The sensitivity of the ultraviolet response from 200 to 400nm is enhanced noticeably, and the spectrum response at wavelengths longer than 400nm is also retained.The experiments show that the Au/n-ZnO/p-Si SHBT UV enhanced phototransistor enhances the sensitivity of the ultraviolet response noticeably.The UV response sensitivity at 370nm of the phototransistor is 5～10 times that of a ZnO/Si heterojunction UV enhanced photodiode.
- Schottky,
- heterojunction,
- WBG semiconductor ZnO,
- UV phototransistor

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