| Citation: |
Gong Xin, Ma Lin, Zhang Xiaoju, Zhang Jinfeng, Yang Yan, Hao Yue. Characteristics of npn AlGaN/GaN HBT[J]. Journal of Semiconductors, 2006, In Press.
Gong X, Ma L, Zhang X J, Zhang J F, Yang Y, Hao Y. Characteristics of npn AlGaN/GaN HBT[J]. Chin. J. Semicond., 2006, 27(9): 1600.
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Characteristics of npn AlGaN/GaN HBT
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Abstract
A modeling of the minority carrier lifetime and impact ionization coefficients of GaN is presented.Then the simulation of an npn AlGaN/GaN heterojunction bipolar transistor (HBT) using a drift-diffusion transport model is executed.The turn-on,offset,and saturation voltages of the device are expressed analytically.Simulation results show that the high turn-on,offset,and saturation voltages of the practical device result from the high base sheet resistance and the nonohmic characteristics of the base contact,which are a reference for the device fabrication.-
Keywords:
- GaN,
- physical models,
- HBT
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References
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Proportional views
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