J. Semicond. > 2008, Volume 29 > Issue 11 > 2286-2291

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Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding

Lao Yanfeng, Cao Chunfang, Wu Huizhen, Cao Meng, Liu Cheng, Xie Zhengsheng and Gong Qian

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Abstract: We designed and fabricated a vertical-cavity surface-emitting laser (VCSEL) that consisted of an InP-based active layer with InAsP/InGaAsP strain-compensated multi-quantum wells,SiO2/TiO2 dielectric film,and GaAs/AlAs semiconductor distributed Bragg reflectors (DBRs).The InP-based active layers and GaAs-based DBRs were integrated using wafer-direct bonding techniques.Then,devices were successfully fabricated upon related device processing such as current-aperture definition using wet-etching undercut techniques and deposition of dielectric DBR,etc.The threshold current of the VCSEL is 13.5mA and the wavelength of the single mode is 1288.6nm.

Key words: vertical-cavity surface-emitting laser, wafer-direct bonding, tunnel junction

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    Received: 18 August 2015 Revised: 10 June 2008 Online: Published: 01 November 2008

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      Article Navigation >  Journal of Semiconductors  > 2008  >  29(11): 2286-2291
      Lao Yanfeng, Cao Chunfang, Wu Huizhen, Cao Meng, Liu Cheng, Xie Zhengsheng, Gong Qian. Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding[J]. Journal of Semiconductors, 2008, In Press. Lao Y F, Cao C F, Wu H Z, Cao M, Liu C, Xie Z S, Gong Q. Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding[J]. J. Semicond., 2008, 29(11): 2286.Export: BibTex EndNote
      Citation:
      Lao Yanfeng, Cao Chunfang, Wu Huizhen, Cao Meng, Liu Cheng, Xie Zhengsheng, Gong Qian. Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding[J]. Journal of Semiconductors, 2008, In Press.

      Lao Y F, Cao C F, Wu H Z, Cao M, Liu C, Xie Z S, Gong Q. Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding[J]. J. Semicond., 2008, 29(11): 2286.
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      Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-04-26
      • Revised Date: 2008-06-10
      • Published Date: 2008-11-11

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