Chin. J. Semicond. > 2005, Volume 26 > Issue 2 > 299-303

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SiGe/Ge/SiGe异质结构中自旋极化输运特性的模拟

邹建平 , 田立林 and 余志平

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Abstract: 利用蒙特卡罗方法对SiGe/Ge/SiGe异质结构的自旋极化输运特性进行了模拟研究.在Ge沟道调制掺杂异质结构形成的二维空穴气中,空穴的自旋进动主要受Rashba自旋轨道相互作用控制.在77~300K的温度范围内,对自旋散射长度、自旋极化率等自旋极化输运特性进行了研究.模拟结果显示,低温和窄宽度沟道有利于减小散射对自旋极化输运的影响,避免自旋极化率衰减,增大自旋散射长度.栅控的漏端电流自旋相关效应使器件跨导增大,并产生负跨导效应.

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2005

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      SiGe/Ge/SiGe异质结构中自旋极化输运特性的模拟[J]. Journal of Semiconductors, 2005, In Press. SiGe/Ge/SiGe异质结构中自旋极化输运特性的模拟[J]. Chin. J. Semicond., 2005, 26(2): 299.Export: BibTex EndNote
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      SiGe/Ge/SiGe异质结构中自旋极化输运特性的模拟[J]. Journal of Semiconductors, 2005, In Press.

      SiGe/Ge/SiGe异质结构中自旋极化输运特性的模拟[J]. Chin. J. Semicond., 2005, 26(2): 299.
      Export: BibTex EndNote

      SiGe/Ge/SiGe异质结构中自旋极化输运特性的模拟

      • Received Date: 2015-08-19

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