Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 204-207
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Growth，Structure and Magnetic Property of zb-CrAs Films on Different Buffers of InGaAs and GaAs

Bi Jingfeng, Zhao Jianhua, Deng Jiajun, Zheng Yuhong, Wang Weizhu and Li Shushen

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Abstract: Zincblende CrAs thin films were grown on InGaAs and GaAs buffer layers by using low-temperature molecular beam epitaxy respectively.High-resolution cross-sectional transmission electron micrographs show that the CrAs thin films grown on both InGaAs and GaAs buffer layers keep zincblende.The curves of remanent magnetization versus temperature indicate that the room·temperature ferromagnetism exists in these two films.

Key words: half-metallic ferromagnet, room-temperature ferromagnetism, molecular-beam epitaxy

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(S1): 204-207
      Bi Jingfeng, Zhao Jianhua, Deng Jiajun, Zheng Yuhong, Wang Weizhu, Li Shushen. Growth，Structure and Magnetic Property of zb-CrAs Films on Different Buffers of InGaAs and GaAs[J]. Journal of Semiconductors, 2007, In Press. Bi J F, Zhao J H, Deng J J, Zheng Y H, Wang W Z, Li S S. Growth，Structure and Magnetic Property of zb-CrAs Films on Different Buffers of InGaAs and GaAs[J]. Chin. J. Semicond., 2007, 28(S1): 204.Export: BibTex EndNote
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      Bi Jingfeng, Zhao Jianhua, Deng Jiajun, Zheng Yuhong, Wang Weizhu, Li Shushen. Growth，Structure and Magnetic Property of zb-CrAs Films on Different Buffers of InGaAs and GaAs[J]. Journal of Semiconductors, 2007, In Press.

      Bi J F, Zhao J H, Deng J J, Zheng Y H, Wang W Z, Li S S. Growth，Structure and Magnetic Property of zb-CrAs Films on Different Buffers of InGaAs and GaAs[J]. Chin. J. Semicond., 2007, 28(S1): 204.
      Export: BibTex EndNote
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      Growth，Structure and Magnetic Property of zb-CrAs Films on Different Buffers of InGaAs and GaAs

      • State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China

      • Department of Physics，University of Science and Technology of China, Hefei 230026, China,State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China and State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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