| Citation: |
Cao Chunfang, Wu Huizhen, Xu Tianning, Si Jianxiao, Chen Jing, Shen Wenzhong. Effect of Strain on the Lattice Vibrational Properties of PbSe[J]. Journal of Semiconductors, 2007, In Press.
Cao C F, Wu H Z, Xu T N, Si J X, Chen J, Shen W Z. Effect of Strain on the Lattice Vibrational Properties of PbSe[J]. Chin. J. Semicond., 2007, 28(S1): 103.
Export: BibTex EndNote
|
Effect of Strain on the Lattice Vibrational Properties of PbSe
-
Abstract
PbSe films with different thickness were grown on lattice-mismatched BaF2 substrate using molecular beam epitaxv.Raman spectrum measurements of PbSe films observed that Pbse samples exhibited Raman active vibrational modes：the first.order 10ngitudinal optical phonons at the r.point of the Brillouin zone (LO) at 136～143cm-1，the mixed modes of firstorder longitudinal and traverse optical phonons (LO-TO) at 83～88cm-1，and the overtone of L0 at 268～280cm-1. With the change of film thickness.the LO phonon frequency of PbSe shifts obviously，as film thickness decreases the frequency increases linearly. This is attributed to the mismatched strain between epitaxial film and substrate, which leads to stress on the PbSe material. To understand the underlying mechanism of the Raman activeness，we also studied PbSe bulk single crystal and find it is Raman active as well.-
Keywords:
- PbSe,
- Raman spectrum,
- optical phonon
-
References
-
Proportional views
DownLoad: