Chin. J. Semicond. > 2006, Volume 27 > Issue S1 > 165-168

PAPERS

Effect of Rapid Thermal Process on Oxygen Precipitatesin Heavily As-Doped Wafer

Sun Shilong, 刘彩池 , Liu Caichi, Hao Qiuyan, Teng Xiaoyun, Zhao Liwei, Zhao Yanqiao and Wang Lijian

+ Author Affiliations

PDF

Abstract: Rapid thermal process (RTP) is performed to heavily-As doped silicon wafer.It is found that the density of oxygen precipitates increases slowly with the increase of the RTP temperature,the cooling rate, and the RTP time.

Key words: :heavily-As doped silicon waferRTPoxygen precipitatesdenuded zone

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 2821 Times PDF downloads: 1347 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 December 2006

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Sun Shilong, Liu Caichi, Hao Qiuyan, Teng Xiaoyun, Zhao Liwei, Zhao Yanqiao, Wang Lijian. Effect of Rapid Thermal Process on Oxygen Precipitatesin Heavily As-Doped Wafer[J]. Journal of Semiconductors, 2006, In Press. Sun S L, Liu C C, Hao Q Y, Teng X Y, Zhao L W, Zhao Y Q, Wang L J. Effect of Rapid Thermal Process on Oxygen Precipitatesin Heavily As-Doped Wafer[J]. Chin. J. Semicond., 2006, 27(13): 165.Export: BibTex EndNote
      Citation:
      Sun Shilong, Liu Caichi, Hao Qiuyan, Teng Xiaoyun, Zhao Liwei, Zhao Yanqiao, Wang Lijian. Effect of Rapid Thermal Process on Oxygen Precipitatesin Heavily As-Doped Wafer[J]. Journal of Semiconductors, 2006, In Press.

      Sun S L, Liu C C, Hao Q Y, Teng X Y, Zhao L W, Zhao Y Q, Wang L J. Effect of Rapid Thermal Process on Oxygen Precipitatesin Heavily As-Doped Wafer[J]. Chin. J. Semicond., 2006, 27(13): 165.
      Export: BibTex EndNote

      Effect of Rapid Thermal Process on Oxygen Precipitatesin Heavily As-Doped Wafer

      • Received Date: 2015-08-20

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return