| Citation: |
Sun Fuhe, Zhang Xiaodan, Zhao Ying, Wang Shifeng, Han Xiaoyan, Li Guijun, Wei Changchun, Sun Jian, Hou Guofu, Zhang Dekun, Geng Xinhua, Xiong Shaozhen. Doped-Chamber Deposition of Intrinsic Microcrystalline Silicon Thin Films and Its Application in Solar Cells[J]. Journal of Semiconductors, 2008, In Press.
Sun F H, Zhang X D, Zhao Y, Wang S F, Han X Y, Li G J, Wei C C, Sun J, Hou G F, Zhang D K, Geng X H, Xiong S Z. Doped-Chamber Deposition of Intrinsic Microcrystalline Silicon Thin Films and Its Application in Solar Cells[J]. J. Semicond., 2008, 29(5): 855.
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Doped-Chamber Deposition of Intrinsic Microcrystalline Silicon Thin Films and Its Application in Solar Cells
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Abstract
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at different silane concentrations in a P chamber.Through analysis of the structural and electrical properties of these materials,we conclude that the photosensitivity slightly decreased then increased as the silane concentration increased,while the crystalline volume fraction indicates the opposite change.Results of XRD indicate that thin films have a (220) preferable orientation under certain conditions.Microcrystalline silicon solar cells with conversion efficiency 4.7% and micromorph tandem solar cells 8.5% were fabricated by VHF-PECVD (p layer and i layer of microcrystalline silicon solar cells were deposited in P chamber),respectively.-
Keywords:
- VHF-PECVD,
- intrinsic microcrystalline silicon,
- solar cells
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References
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