| Citation: |
He Guorong, Zheng Wanhua, Qu Hongwei, Yang Guohua, Wang Qing, Wu Xuming, Cao Yulian, Chen Lianghui. Analysis of the Fabrication of a Surface Emitting Laser by the Bonding Method[J]. Journal of Semiconductors, 2007, In Press.
He G R, Zheng W H, Qu H W, Yang G H, Wang Q, Wu X M, Cao Y L, Chen L H. Analysis of the Fabrication of a Surface Emitting Laser by the Bonding Method[J]. Chin. J. Semicond., 2007, 28(3): 444.
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Analysis of the Fabrication of a Surface Emitting Laser by the Bonding Method
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Abstract
InGaAsP/InP active regions were single-fused or double-fused to GaAs/AlAs DBRs by hydrophobic bonding.The mechanical,optical,and electrical characteristics of the bonded interfaces were investigated through SEM,reflection spectrum,PL spectrum,and I-Vcurves.Good performance indicates an excellent interface.This makes it possible for the fabrication of long-wavelength surface emitting lasers by the bonding technique.-
Keywords:
- bonding,
- surface emitting laser,
- photoluminescence spectrum
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References
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