| Citation: |
Qi Haitao, Li Yali, Zhang Xiongwen, Feng Zhen, Shang Yaohui, Guo Weilian. Design and Fabrication of RTD/HEMT Series Connection ResonantTunneling Transistor[J]. Journal of Semiconductors, 2007, In Press.
Qi H T, Li Y L, Zhang X W, Feng Z, Shang Y H, Guo W L. Design and Fabrication of RTD/HEMT Series Connection ResonantTunneling Transistor[J]. Chin. J. Semicond., 2007, 28(7): 1107.
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Design and Fabrication of RTD/HEMT Series Connection ResonantTunneling Transistor
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Abstract
Based on the conception of RTD/HEMT series connection resonant tunneling transistors,an RTD/HEMT monolithic integration material structure was designed and grown by molecular beam epitaxy.RTT was fabricated using wet chemical etching,metal lift-off,mass isolation,and air bridge technologies.The device has a distinct gate-controlled negative differential resistance.The maximal peak-to-valley current ratio (PVCR) of the forward direction connection RTT is about 2.2 and the maximal PVCR of the backward direction connection RTT is about 4.6.This experiment lays a foundation for the optimization of RTT and RTD/HEMT monolithic integration circuit development. -
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