| Citation: |
Wang Yi, He Le’nian, Yan Xiaolang. A 30nA Temperature-Independent CMOS Current Reference and Its Application in an LDO[J]. Journal of Semiconductors, 2006, In Press.
Wang Y, He L, Yan X L. A 30nA Temperature-Independent CMOS Current Reference and Its Application in an LDO[J]. Chin. J. Semicond., 2006, 27(9): 1657.
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A 30nA Temperature-Independent CMOS Current Reference and Its Application in an LDO
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Abstract
A high-precision CMOS current reference circuit is proposed for using in low-dropout (LDO) voltage regulators with low power.A current reference of 30nA,independent of supply voltage,is obtained with the sub-threshold region design method.In the high temperature region,taking advantage of the reverse current of the parasitic diode in the MOS transistor,every branch current in the current mirror is compensated,so that the precision of the 30nA current reference is improved from ±1nA to ±0.6nA in the range of -40～130℃.Using this current reference,the total quiescent current of the LDO is around 4μA in the range of -40～130℃.The proposed circuit is simulated using Spectre from Candence,and the chip is implemented in CSMC 0.5μm mixed-signal technology.The designed circuit is validated by the results of the chip test.-
Keywords:
- 30nA,
- quiescent current,
- parasitic diode,
- LDO
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References
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