| Citation: |
Wang Huizhi, Li Fuxiao. Design and Fabrication of Excellent Ultra-Broad Digital Attenuator Chips[J]. Journal of Semiconductors, 2006, In Press.
Wang H Z, Li F X. Design and Fabrication of Excellent Ultra-Broad Digital Attenuator Chips[J]. Chin. J. Semicond., 2006, 27(6): 1125.
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Design and Fabrication of Excellent Ultra-Broad Digital Attenuator Chips
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Abstract
This paper describes the design,fabrication,and testing of an MMIC digital attenuator covering the range of 50MHz～20GHz and also describes in detail how to realize an ultra-broad attenuator.This attenuator is fabricated in a 0.5μm ion-implanted process.The attenuator shows exceptional performance,with an insertion loss of reference state of less than 5dB.The input and output VSWRs are better than 15∶1 over all states and the entire frequency range.The attenuation accuracy is within ±0.3dB (the actual attenuation-the attenuation setting).The phase variation (reference to insertion state) is between -5°～20°.The 1dB compression point is 22dBm(at 10GHz).-
Keywords:
- ultra-broad band,
- GaAs,
- digital attenuator,
- MESFET
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References
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Proportional views
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