| Citation: |
Huang Zhanchao, Wu Huizhen, Lao Yanfeng, Liu Cheng, Cao Meng. XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers[J]. Journal of Semiconductors, 2006, In Press.
Huang Z C, Wu H Z, Lao Y F, Liu C, Cao M. XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers[J]. Chin. J. Semicond., 2006, 27(13): 58.
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XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers
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Abstract
The strain state of compressed InAsP and tensile InGaAsP layers,which are grown on (100) InP substrate by molecular beam epitaxy,is investigated through X-ray triple-axis diffraction mapping.(004) and (224) plane diffraction mappings of two materials are tested.The results indicate that partly relaxed InGaAsP epilayer has different strains at different azimuth.Excluding the influence of tilt and strain of epilayer,we accurately calculate the bulk mismatch of InAsP and InGaAsP,which is 1.446% and -0.5849%, respectively.And high quality strain-compensated multiple quantum wells (8) is grown according to these precise parameters.-
Keywords:
- X-ray diffraction,
- reciprocal space mapping,
- strain,
- quantum wells
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References
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Proportional views
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