Piezoresistive Properties of Resonant Tunneling Diodes

Mao Haiyang; Xiong Jijun; Zhang Wendong; Xue Chenyang; Sang Shengbo; Bao Aida

Key Laboratory of Instrumentation Science & Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China,Taiyuan 030051,China
Key Laboratory of Instrumentation Science & Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China,Taiyuan 030051,China
Key Laboratory of Instrumentation Science & Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China,Taiyuan 030051,China
Key Laboratory of Instrumentation Science & Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China,Taiyuan 030051,China
Key Laboratory of Instrumentation Science & Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China,Taiyuan 030051,China
Key Laboratory of Instrumentation Science & Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China,Taiyuan 030051,China

Article Navigation > Journal of Semiconductors > 2006 > 27(10): 1789-1793

Mao Haiyang, Xiong Jijun, Zhang Wendong, Xue Chenyang, Sang Shengbo, Bao Aida. Piezoresistive Properties of Resonant Tunneling Diodes[J]. Journal of Semiconductors, 2006, In Press. Mao H Y, Xiong J J, Zhang W D, Xue C Y, Sang S B, Bao A D. Piezoresistive Properties of Resonant Tunneling Diodes[J]. Chin. J. Semicond., 2006, 27(10): 1789.Export: BibTex EndNote

Citation:

Mao Haiyang, Xiong Jijun, Zhang Wendong, Xue Chenyang, Sang Shengbo, Bao Aida. Piezoresistive Properties of Resonant Tunneling Diodes[J]. Journal of Semiconductors, 2006, In Press.

Mao H Y, Xiong J J, Zhang W D, Xue C Y, Sang S B, Bao A D. Piezoresistive Properties of Resonant Tunneling Diodes[J]. Chin. J. Semicond., 2006, 27(10): 1789.

Export: BibTex EndNote

Citation:

Mao Haiyang, Xiong Jijun, Zhang Wendong, Xue Chenyang, Sang Shengbo, Bao Aida. Piezoresistive Properties of Resonant Tunneling Diodes[J]. Journal of Semiconductors, 2006, In Press.

Mao H Y, Xiong J J, Zhang W D, Xue C Y, Sang S B, Bao A D. Piezoresistive Properties of Resonant Tunneling Diodes[J]. Chin. J. Semicond., 2006, 27(10): 1789.

Export: BibTex EndNote

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Piezoresistive Properties of Resonant Tunneling Diodes

Key Laboratory of Instrumentation Science & Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China,Taiyuan 030051,China
Key Laboratory of Instrumentation Science & Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China,Taiyuan 030051,China
Key Laboratory of Instrumentation Science & Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China,Taiyuan 030051,China
Key Laboratory of Instrumentation Science & Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China,Taiyuan 030051,China
Key Laboratory of Instrumentation Science & Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China,Taiyuan 030051,China
Key Laboratory of Instrumentation Science & Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China,Taiyuan 030051,China

Received Date: 2015-08-18
Accepted Date: 2006-03-20
Revised Date: 2006-04-24
Published Date: 2006-10-12

Abstract

Abstract

This paper reports the piezoresistive properties of resonant tunneling diodes (RTDs) as detected with a newly established testing system.The shifts of their I-V characteristics in different stress states are detected,demonstrating that the RTDs possess piezoresistive properties.The sensitivity of the RTDs is larger than 1E-8Pa-1.Moreover,to accurately illustrate the piezoresistive properties of RTD,the I-V characteristic coherence of an RTD is tested.According to the experimental results,the largest relative resistance shift of an RTD in the same environmental condition is less than 3%,1% of which is caused by the testing instrument.
- resonant tunneling diode,
- piezoresistive property,
- coherence,
- sensitivity,
- Raman spectrum

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