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Saturation Behavior of Ultrathin Gate Oxides After Soft Breakdown

Xu Mingzhen, Tan Changhua and Duan Xiaorong

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Abstract: The physical origin of post soft breakdown (SBD) current saturation behavior of ultrathin gate oxides is discussed on the basis of electron velocity saturation concept.The post soft breakdown current-voltage (I-V) characteristic is studied with the proportional difference operator (PDO) method.It is shown that the proportional difference of the soft breakdown I-V curve is a peak function.Its peak position and height are related to the saturation velocity of electron in SBD path and the saturation current density through the SBD path,respectively.In addition a simple and useful method of defining and characterizing the SBD path cross-section in SiO2 based on the defect scattering mechanism is also presented.

Key words: ultrathin SiO2soft breakdownI-V saturation characteristics

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2006

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      Xu Mingzhen, Tan Changhua, Duan Xiaorong. Saturation Behavior of Ultrathin Gate Oxides After Soft Breakdown[J]. Journal of Semiconductors, 2006, In Press. Xu M Z, Tan C H, Duan X R. Saturation Behavior of Ultrathin Gate Oxides After Soft Breakdown[J]. Chin. J. Semicond., 2006, 27(13): 193.Export: BibTex EndNote
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      Xu Mingzhen, Tan Changhua, Duan Xiaorong. Saturation Behavior of Ultrathin Gate Oxides After Soft Breakdown[J]. Journal of Semiconductors, 2006, In Press.

      Xu M Z, Tan C H, Duan X R. Saturation Behavior of Ultrathin Gate Oxides After Soft Breakdown[J]. Chin. J. Semicond., 2006, 27(13): 193.
      Export: BibTex EndNote

      Saturation Behavior of Ultrathin Gate Oxides After Soft Breakdown

      • Received Date: 2015-08-20

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