Chin. J. Semicond. > 2005, Volume 26 > Issue 3 > 502-507
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常压MOCVD生长的ZnO薄膜的电学性能

周鹏 , 王立 , 方文卿 , 蒲勇 , 戴江南 and 江风益

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Abstract: 利用常压MOCVD法在蓝宝石(0001)衬底上沉积了非故意掺杂ZnO单晶薄膜．用Van der Pauw法测量了其从15K到室温的载流子浓度和霍耳迁移率，并用双层结构单施主模型对载流子浓度和迁移率进行了拟合分析．研究表明：ZnO薄膜浅施主能级为20.4meV，温度较低时，以电离杂质散射为主，温度较高时，以极性光学波散射为主．

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(3): 502-507
      常压MOCVD生长的ZnO薄膜的电学性能[J]. Journal of Semiconductors, 2005, In Press. 常压MOCVD生长的ZnO薄膜的电学性能[J]. Chin. J. Semicond., 2005, 26(3): 502.Export: BibTex EndNote
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      常压MOCVD生长的ZnO薄膜的电学性能[J]. Journal of Semiconductors, 2005, In Press.

      常压MOCVD生长的ZnO薄膜的电学性能[J]. Chin. J. Semicond., 2005, 26(3): 502.
      Export: BibTex EndNote
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      常压MOCVD生长的ZnO薄膜的电学性能

      • Received Date: 2015-08-19

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