| Citation: |
Wang Limin, Cao Juncheng. Current Characteristics of High-Electron-Mobility Transistors Driven by a Terahertz Field and Magnetic Field[J]. Journal of Semiconductors, 2008, In Press.
Wang L M, Cao J C. Current Characteristics of High-Electron-Mobility Transistors Driven by a Terahertz Field and Magnetic Field[J]. J. Semicond., 2008, 29(7): 1357.
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Current Characteristics of High-Electron-Mobility Transistors Driven by a Terahertz Field and Magnetic Field
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Abstract
When a high-electron mobility transistor (HEMT) is driven by a terahertz (THz) field and magnetic field,plasma oscillation appears in the channel of the HEMT.We have investigated the effect of the THz field and magnetic field on the current characteristics of the HEMTs.The results show that the peaks of the responsivities of the HEMT exhibit blueshift as the magnetic field increases.We may tune the frequencies of the plasma oscillation by changing the magnetic field. -
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