Chin. J. Semicond. > 2004, Volume 25 > Issue 10 > 1306-1310
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CONTENTS

超薄SiO_2栅介质厚度提取与分析

谭静荣 , 许晓燕 , 黄如 , 程行之 and 张兴

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Key words: 超薄栅介质, 量子效应, 多晶硅耗尽效应, 栅氧厚度

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(10): 1306-1310
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      • Received Date: 2015-08-19

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