Chin. J. Semicond. > 1986, Volume 7 > Issue 2 > 154-163
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InGaAsP半导体激光器中能带结构对俄歇复合的影响及其对T_0的贡献

郭长志 and 刘要武

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    Received: 20 August 2015 Revised: Online: Published: 01 February 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(2): 154-163
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      • Received Date: 2015-08-20

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