Energy Band Design for a Terahertz Si/SiGe Quantum Cascade Laser

Lin Guijiang; Lai Hongkai; Li Cheng; Chen Songyan; Yu Jinzhong

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Lin Guijiang, Lai Hongkai, Li Cheng, Chen Songyan, Yu Jinzhong. Energy Band Design for a Terahertz Si/SiGe Quantum Cascade Laser[J]. Journal of Semiconductors, 2006, In Press. Lin G J, Lai H K, Li C, Chen S Y, Yu J Z. Energy Band Design for a Terahertz Si/SiGe Quantum Cascade Laser[J]. Chin. J. Semicond., 2006, 27(5): 916.Export: BibTex EndNote

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Lin Guijiang, Lai Hongkai, Li Cheng, Chen Songyan, Yu Jinzhong. Energy Band Design for a Terahertz Si/SiGe Quantum Cascade Laser[J]. Journal of Semiconductors, 2006, In Press.

Lin G J, Lai H K, Li C, Chen S Y, Yu J Z. Energy Band Design for a Terahertz Si/SiGe Quantum Cascade Laser[J]. Chin. J. Semicond., 2006, 27(5): 916.

Export: BibTex EndNote

Citation:

Lin Guijiang, Lai Hongkai, Li Cheng, Chen Songyan, Yu Jinzhong. Energy Band Design for a Terahertz Si/SiGe Quantum Cascade Laser[J]. Journal of Semiconductors, 2006, In Press.

Lin G J, Lai H K, Li C, Chen S Y, Yu J Z. Energy Band Design for a Terahertz Si/SiGe Quantum Cascade Laser[J]. Chin. J. Semicond., 2006, 27(5): 916.

Export: BibTex EndNote

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Energy Band Design for a Terahertz Si/SiGe Quantum Cascade Laser

Department of Physics,Semiconductor Photonics Research Center, Xiamen University,Xiamen 361005,China
Department of Physics,Semiconductor Photonics Research Center, Xiamen University,Xiamen 361005,China
Department of Physics,Semiconductor Photonics Research Center, Xiamen University,Xiamen 361005,China
Department of Physics,Semiconductor Photonics Research Center, Xiamen University,Xiamen 361005,China
Department of Physics,Semiconductor Photonics Research Center, Xiamen University,Xiamen 361005,China
State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

Received Date: 2015-08-20

Abstract

Abstract

The eigenenergies of confined states in Si/SiGe/Si quantum wells are calculated with nextnano3 software for the design of terahertz Si/SiGe QCLs.The results indicate that the structure of the Si/SiGe quantum cascade may be optimized by using a strain-symmetric heterostructure consisting of a Si1-xGex(0.27＜x＜0.3) well with a width of 3nm and a Si barrier with a width of 3nm.
- Si/SiGe,
- quantum cascade laser,
- intersubband interwell transitions,
- nextnano3

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