A unified breakdown model of SOI RESURF device with uniform,step，or linear drift region doping profile is firstly proposed.By the model,the electric field distribution and breakdown voltage are researched in detail for the step numbers from 0 to infinity.The critic electric field as the function of the geometry parameters and doping profile is derived.For the thick film device,linear doping profile can be replaced by a single or two steps doping profile in the drift region due to a considerable uniformly lateral electric field,almost ideal breakdown voltage,and simplified design and fabrication.The availability of the proposed model is verified by the good accordance among the analytical results,numerical simulations,and reported experiments.