| Citation: |
Deng Ning, Xiao Hong, Chen Peiyi, Li Zhijian. Kinetic monte Carlo simulation of initial nucleation stage of 2D Ge islands[J]. Journal of Semiconductors, 2003, In Press.
Deng N, Xiao H, Chen P Y, Li Z J. Kinetic monte Carlo simulation of initial nucleation stage of 2D Ge islands[J]. Chin. J. Semicond., 2003, 24(S1): 56.
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Kinetic monte Carlo simulation of initial nucleation stage of 2D Ge islands
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Abstract
Initial nucleation stage of 2D Ge islands during the self-assembled groWth of Ge islands in Si/Ge mismatch system is studied by Kinetic Monte Carlo ( KMC) simulation. The diffusion barrier is corrected by introducing a strain field induced by adsorbed atoms. The influence of stain and substrate temperature on nucleation sites and size is investigated. The nucleation of 2D islands is determined by strain field and the self-assembled growth can be controlled by modulating the stain on the surface. -
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