Chin. J. Semicond. > 2007, Volume 28 > Issue 11 > 1661-1673

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The Bipolar Field-Effect Transistor:I.Electrochemical Current Theory(Two-MOS-Gates on Pure-Base)

Chih-Tang Sah and Bin B. Jie

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Abstract: This paper describes the bipolar field-effect transistor (BiFET) and its theory.Analytical solution is obtained from partitioning the two-dimensional transistor into two one-dimensional transistors.The analysis employs the parametric surface-electric-potential and the electrochemical (quasi-Fermi) potential-gradient driving force to compute the current. Output and transfer D.C.current and conductance versus voltage are presented over practical ranges of terminal D.C.voltages and device parameters. Electron and hole surface channel currents are present simultaneously,a new feature which could provide circuit functions in one physical transistor such as the CMOS inverter and SRAM memory.

Key words: bipolar field-effect transistor theoryMOS field-effect transistorbipolar junction transistorsimultaneous hole and electron surface channelvolume表面势

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    Received: 18 August 2015 Revised: Online: Published: 01 November 2007

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      Chih-Tang Sah, Bin B. Jie. The Bipolar Field-Effect Transistor:I.Electrochemical Current Theory(Two-MOS-Gates on Pure-Base)[J]. Journal of Semiconductors, 2007, In Press. Chih-Tang S, Bin B. Jie. The Bipolar Field-Effect Transistor:I.Electrochemical Current Theory(Two-MOS-Gates on Pure-Base)[J]. Chin. J. Semicond., 2007, 28(11): 1661.Export: BibTex EndNote
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      Chih-Tang Sah, Bin B. Jie. The Bipolar Field-Effect Transistor:I.Electrochemical Current Theory(Two-MOS-Gates on Pure-Base)[J]. Journal of Semiconductors, 2007, In Press.

      Chih-Tang S, Bin B. Jie. The Bipolar Field-Effect Transistor:I.Electrochemical Current Theory(Two-MOS-Gates on Pure-Base)[J]. Chin. J. Semicond., 2007, 28(11): 1661.
      Export: BibTex EndNote

      The Bipolar Field-Effect Transistor:I.Electrochemical Current Theory(Two-MOS-Gates on Pure-Base)

      • Received Date: 2015-08-18

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