J. Semicond. > 2008, Volume 29 > Issue 8 > 1436-1440

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Preparation of (SiFe)C DMS Based 4H-SiC Substrate

Jiang Yanfeng and Wang Jianping

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Abstract: A diluted magnetic 4H-SiC has been prepared by implanting Fe ions into the substrate.Its Curie temperature reaches as high as 320K and its technology is compatible with current IC.Moreover,the process includes three annealing steps,named HNH annealing in this paper.Each step during this annealing has been analyzed.Comparisons have been made with different Fe concentrations and experimental results demonstrate that when the concentration of Fe is 0.051,the Curie temperature is the highest.According to measurements,some explanation of this phenomenon is given.

Key words: spintronicsdiluted magnetic semiconductorannealingCurie temperature

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    Received: 18 August 2015 Revised: 07 April 2008 Online: Published: 01 August 2008

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      Jiang Yanfeng, Wang Jianping. Preparation of (SiFe)C DMS Based 4H-SiC Substrate[J]. Journal of Semiconductors, 2008, In Press. Jiang Y F, Wang J P. Preparation of (SiFe)C DMS Based 4H-SiC Substrate[J]. J. Semicond., 2008, 29(8): 1436.Export: BibTex EndNote
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      Jiang Yanfeng, Wang Jianping. Preparation of (SiFe)C DMS Based 4H-SiC Substrate[J]. Journal of Semiconductors, 2008, In Press.

      Jiang Y F, Wang J P. Preparation of (SiFe)C DMS Based 4H-SiC Substrate[J]. J. Semicond., 2008, 29(8): 1436.
      Export: BibTex EndNote

      Preparation of (SiFe)C DMS Based 4H-SiC Substrate

      • Received Date: 2015-08-18
      • Accepted Date: 2008-01-02
      • Revised Date: 2008-04-07
      • Published Date: 2008-08-02

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