Chin. J. Semicond. > 2005, Volume 26 > Issue 11 > 2080-2084

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Characteristics of a 0.1μm SOI Grooved Gate pMOSFET

Shao Hongxu, Sun Baogang, Wu Junfeng and Zhong Xinghua

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Abstract: A 0.1μm SOI grooved gate pMOSFET with 5.6nm gate oxide is fabricated and demonstrated.The groove depth is 180nm.The transfer characteristics and the output characteristics are shown.At Vds=-1.5V,the drain saturation current is 380μA and the off-state leakage current is 1.9nA;the sub-threshold slope is 115mV/dec at Vds=-0.1V and DIBL factor is 70.7mV/V.The electrical characteristic comparison between the 0.1μm SOI grooved-gate pMOSFET and the 0.1μm bulk grooved gate one with the same process demonstrates that a 0.1μm SOI grooved gate pMOSFET has better characteristics in current-driving capability and sub-threshold slope.

Key words: SOIgrooved gate pMOSFETsub-threshold slope

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    Received: 19 August 2015 Revised: Online: Published: 01 November 2005

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      • Received Date: 2015-08-19

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