Chin. J. Semicond. > 2006, Volume 27 > Issue S1 > 227-230

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A Research on Current Collapse of GaN HEMTs Under DC High Voltage

Long Fei, Du Jiangfeng, Luo Qian, Zhou Wei, Xia Jianxin and Yang Mohua

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Abstract: Based on GaN HEMTs’ device physics and experiment testing results,a new physical model of current collapse is presented.Research results show that under high drain voltage the channel electrons easily eject into GaN buffer layer and are trapped,depleting 2DEG and inducing current collapse.This model describes relationship between current collapse and traps in buffer layer,obtaining product 0.95×θ|VGS| of electron mobility and 2DEG density before and after current collapse.This conclusion can be assisted in AlGaN/GaN HEMT devices’ further theory research and investigation.

Key words: current collapseGaN HEMTtrapphysical model

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2006

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      Long Fei, Du Jiangfeng, Luo Qian, Zhou Wei, Xia Jianxin, Yang Mohua. A Research on Current Collapse of GaN HEMTs Under DC High Voltage[J]. Journal of Semiconductors, 2006, In Press. Long F, Du J F, Luo Q, Zhou W, Xia J X, Yang M H. A Research on Current Collapse of GaN HEMTs Under DC High Voltage[J]. Chin. J. Semicond., 2006, 27(13): 227.Export: BibTex EndNote
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      Long Fei, Du Jiangfeng, Luo Qian, Zhou Wei, Xia Jianxin, Yang Mohua. A Research on Current Collapse of GaN HEMTs Under DC High Voltage[J]. Journal of Semiconductors, 2006, In Press.

      Long F, Du J F, Luo Q, Zhou W, Xia J X, Yang M H. A Research on Current Collapse of GaN HEMTs Under DC High Voltage[J]. Chin. J. Semicond., 2006, 27(13): 227.
      Export: BibTex EndNote

      A Research on Current Collapse of GaN HEMTs Under DC High Voltage

      • Received Date: 2015-08-20

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