| Citation: |
Lü Xiaohong, Zhao Youwen, Sun Wenrong, Dong Zhiyuan. Lattice Perfection of GaSb and InAs Single Crystal Substrate[J]. Journal of Semiconductors, 2007, In Press.
Lü X, Zhao Y W, Sun W R, Dong Z Y. Lattice Perfection of GaSb and InAs Single Crystal Substrate[J]. Chin. J. Semicond., 2007, 28(S1): 163.
Export: BibTex EndNote
|
Lattice Perfection of GaSb and InAs Single Crystal Substrate
-
Abstract
Large lattice distortion caused by high dislocation accumulation region in dendritic shape is observed on (100) wafer of GaSb by using X-ray diffraction and dislocation etching.This is caused by dendritic growth in the crystal centre origi· hated from the existence of large temperature super·cooling in the growth process.A large quantity of As excess related defect is generated in lnAs under As-rich growth condition.The defect destroys lattice perfection of InAs single crystal.-
Keywords:
- GaSb,
- InAs,
- single crystal,
- lattice defect
-
References
-
Proportional views
DownLoad: