| Citation: |
Wang Ronghua, Han Ping, Xia Dongmei, Li Zhibing, Han Tiantian, Liu Chengxiang, Fu Kai, Xie Zili, Xiu Xiangqian, Zhu Shunming, Gu Shulin, Shi Yi, Zhang Rong, Zheng Youdou. Chemical Vapor Deposition of Ge Films on Si1-xGex∶C Buffers[J]. Journal of Semiconductors, 2006, In Press.
Wang R H, Han P, Xia D M, Li Z B, Han T T, Liu C X, Fu K, Xie Z L, Xiu X Q, Zhu S M, Gu S L, Shi Y, Zhang R, Zheng Y D. Chemical Vapor Deposition of Ge Films on Si1-xGex∶C Buffers[J]. Chin. J. Semicond., 2006, 27(13): 151.
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Chemical Vapor Deposition of Ge Films on Si1-xGex∶C Buffers
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Abstract
Ge films have been deposited on Si (100) substrates with Si1-xGex∶C buffers by chemical vapor deposition method.Based on the results of Auger electron spectroscopy,Si1-xGex∶C buffers are thought to be consisted of two layers.One is the Si1-xGex∶C epitaxial layer due to the reaction of GeH4,C2H4 and Si atoms diffusing from the substrate to the surface,and the other is the Si1-xGex layer due to Ge atoms diffusing from the Si1-xGex∶C epitaxial layer to the substrate.Ge films grown on Si1-xGex∶C buffers have a good crystal orientation,with the thickness of the films exceeding the critical thickness of the Ge film deposited on Si directly.The electron mobility of the films equals with bulk Ge materials with the same doping concentration of 1.0E19cm-3.-
Keywords:
- CVD,
- Si1-xGex∶C buffers,
- Ge films
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References
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Proportional views
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