Chin. J. Semicond. > 2002, Volume 23 > Issue 11 > 1154-1157
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采用非对称结构和注Ge的部分耗尽SOI nMOSFET的浮体效应(英文)

刘运龙 , 刘新宇 , 韩郑生 , 海潮和 and 钱鹤

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Key words: SOInMOSFET, 浮体效应, 注Ge

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    Received: 19 August 2015 Revised: Online: Published: 01 November 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(11): 1154-1157
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      • Received Date: 2015-08-19

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