Chin. J. Semicond. > 2006, Volume 27 > Issue 2 > 290-293

PAPERS

Breakdown Voltage and Charge to Breakdown Investigation of Gate Oxide of 0.18μm Dual Gate CMOS Process with Different Measurement Methods

Zhao Yi, Wan Xinggong, Xu Xiangming, Cao Gang and Bu Jiao

+ Author Affiliations

PDF

Abstract: Breakdown voltage (Vbd) and charge to breakdown (Qbd) are two parameters often used to evaluate gate oxide reliability.In this paper,we investigate the effects of measurement methods on Vbd and Qbd of the gate oxide of a 0.18μm dual gate CMOS process.Voltage ramps (V-ramp) and current ramps (J-ramp) are used to evaluate gate oxide reliability.The thin and thick gate oxides are all evaluated in the accumulation condition.Our experimental results show that the measurement methods affect Vbd only slightly but affect Qbd seriously,as do the measurement conditions.This affects the I-t curves obtained with the J-ramp and V-ramp methods.From the I-t curve,it can be seen that Qbd obtained using a J-ramp is much bigger than that with a V-ramp.At the same time,the Weibull slopes of Qbd are definitely smaller than those of Vbd.This means that Vbd is more reliable than Qbd.Thus we should be careful to use Qbd to evaluate the reliability of 0.18μm or beyond CMOS process gate oxide.

Key words: gate oxide reliability voltage to breakdown charge to breakdown voltage ramp current ramp

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 3403 Times PDF downloads: 5164 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 February 2006

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Zhao Yi, Wan Xinggong, Xu Xiangming, Cao Gang, Bu Jiao. Breakdown Voltage and Charge to Breakdown Investigation of Gate Oxide of 0.18μm Dual Gate CMOS Process with Different Measurement Methods[J]. Journal of Semiconductors, 2006, In Press. Zhao Y, Wan X G, Xu X M, Cao G, Bu J. Breakdown Voltage and Charge to Breakdown Investigation of Gate Oxide of 0.18μm Dual Gate CMOS Process with Different Measurement Methods[J]. Chin. J. Semicond., 2006, 27(2): 290.Export: BibTex EndNote
      Citation:
      Zhao Yi, Wan Xinggong, Xu Xiangming, Cao Gang, Bu Jiao. Breakdown Voltage and Charge to Breakdown Investigation of Gate Oxide of 0.18μm Dual Gate CMOS Process with Different Measurement Methods[J]. Journal of Semiconductors, 2006, In Press.

      Zhao Y, Wan X G, Xu X M, Cao G, Bu J. Breakdown Voltage and Charge to Breakdown Investigation of Gate Oxide of 0.18μm Dual Gate CMOS Process with Different Measurement Methods[J]. Chin. J. Semicond., 2006, 27(2): 290.
      Export: BibTex EndNote

      Breakdown Voltage and Charge to Breakdown Investigation of Gate Oxide of 0.18μm Dual Gate CMOS Process with Different Measurement Methods

      • Received Date: 2015-08-20

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return