Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 144-147

Hydrodynamic Simulation of Sub 50nm Double Gate MOSFET

Liu Yibo, Liu Enfeng, Liu Xiaoyan and Han Rugi

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Abstract: The performance of sub 50nm double gate MOSFET with different channel-length is simulated by the hydrodynamic simulation software developed. The distribution of electron temperature and drift velocity is compared in the channel direction. The short channel effect is also analyzed.

Key words: hydrodynamic double gate MOSFET threshold vo1tage short channel effect electron temperature velocity

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    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

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      Liu Yibo, Liu Enfeng, Liu Xiaoyan, Han Rugi. Hydrodynamic Simulation of Sub 50nm Double Gate MOSFET[J]. Journal of Semiconductors, 2003, In Press. Liu Y B, Liu E F, Liu X Y, Han R. Hydrodynamic Simulation of Sub 50nm Double Gate MOSFET[J]. Chin. J. Semicond., 2003, 24(S1): 144.Export: BibTex EndNote
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      Liu Yibo, Liu Enfeng, Liu Xiaoyan, Han Rugi. Hydrodynamic Simulation of Sub 50nm Double Gate MOSFET[J]. Journal of Semiconductors, 2003, In Press.

      Liu Y B, Liu E F, Liu X Y, Han R. Hydrodynamic Simulation of Sub 50nm Double Gate MOSFET[J]. Chin. J. Semicond., 2003, 24(S1): 144.
      Export: BibTex EndNote

      Hydrodynamic Simulation of Sub 50nm Double Gate MOSFET

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

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