| Citation: |
Wang Yufeng, Wang Zhigong, Lü Xiaoying, Wang Huiling. A Single-Chip and Low-Power CMOS Amplifier for Neural Signal Detection[J]. Journal of Semiconductors, 2006, In Press.
Wang Y F, Wang Z G, Lü X, Wang H L. A Single-Chip and Low-Power CMOS Amplifier for Neural Signal Detection[J]. Chin. J. Semicond., 2006, 27(8): 1490.
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A Single-Chip and Low-Power CMOS Amplifier for Neural Signal Detection
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Abstract
This paper presents an implantable amplifier for neural signal recording with cuff electrodes in CSMC 0.6μm CMOS technology.The amplifier consists of a low-noise preamplifier stage,a current-mode instrumentation amplifier stage,a buffer stage,and a constant-gm bias stage.The supply voltage is 2.5/±1.25V, and the power consumption is 180μW.In implementing an implanted neural signal detector extra components can be avoided by using novel techniques.According to the neural signal spectrum,the pass-band of the amplifier is set to 59Hz～12.8kHz and the mid-band gain is 80dB.Measurements of the amplifer’s time domain performance are in agreement with the design.From the measurements, further ways to improve are determined. -
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