| Citation: |
Zeng Guanggen, Li Bing, Zheng Jiagui, Li Yuanjie, Zhang Jingquan, Li Wei, Lei Zhi, Wu Lili, Cai Yaping, Feng Lianghuan. Properties of CdTe Source Prepared by Close-Spaced Sublimation in O2 Atmosphere[J]. Journal of Semiconductors, 2008, In Press.
Zeng G G, Li B, Zheng J G, Li Y J, Zhang J Q, Li W, Lei Z, Wu L L, Cai Y P, Feng L H. Properties of CdTe Source Prepared by Close-Spaced Sublimation in O2 Atmosphere[J]. J. Semicond., 2008, 29(1): 133.
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Properties of CdTe Source Prepared by Close-Spaced Sublimation in O2 Atmosphere
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Abstract
We studied the structure configuration and components of CdTe sources,which are often used during the preparation of the CdTe polycrystalline films with the close-spaced sublimation method.Results show that the surface of CdTe sources that are used many times are intended to become yellow,and there are CdO powders on it.The oxide on the surface can be deoxidized by H2 at high temperatures under certain conditions,which establishes a foundation for the repetitive use of CdTe source. -
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