| Citation: |
Bao Li, Bao Junlin, Zhuang Yiqi. A Method for Locating the Position of an Oxide Trap in a MOSFET by RTS Noise[J]. Journal of Semiconductors, 2006, In Press.
Bao L, Bao J L, Zhuang Y Q. A Method for Locating the Position of an Oxide Trap in a MOSFET by RTS Noise[J]. Chin. J. Semicond., 2006, 27(8): 1426.
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A Method for Locating the Position of an Oxide Trap in a MOSFET by RTS Noise
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Abstract
The timing characteristics of random telegraph signal (RTS) in deep submicron MOS devices are investigated,and a novel method is proposed to determine the spatial distribution of the border traps by forward and backward RTS measurements in the non-saturation state.The measurements of a 0.18μm×0.15μm nMOS device show that the two-dimension position of the trap in the oxide of a deep submicron MOS device can be precisely calculated with this method.This method can also evaluate the reliability of deep submicron MOS devices.-
Keywords:
- RTS,
- deep submicron,
- border traps,
- MOS device,
- reliability
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References
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Proportional views
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