Abstract: We report a novel method for obtaining high-density Ge-dots/Si multilayered structures by combining low-pressure chemical vapor deposition and metal-induced lateral crystallization.High density self-assembled Ge-dots/a-Si multilayered structures are first deposited on SiO2/Si (100) substrates using low-pressure chemical vapor deposition,and then a-Si layers are crystallized by low-temperature (below 550℃) Ni-based metal-induced lateral crystallization.Optical micrograph,electron microscopy, and micro-Raman spectroscopy observations show that the lateral crystallization Si regions have large leaf-like grains (about 4～5μm in diameter) elongated along the metal-induced lateral crystallization direction with (110) preference.The strain shift of Ge dots reveals the formation of a high quality interface between the crystallized Si and Ge dots.

Key words: Ge-dots/Si multilayered structure, low-pressure chemical vapor deposition, metal induced lateral crystallization